Types of ROM
As the name suggests, a read-only memory (ROM) contains a permanent pattern of data that cannot be changed. A ROM is nonvolatile; that is, no power source is required to maintain the bit values in memory. While it is possible to read a ROM, it is not possible to write new data into it. An important application of ROMs is microprogramming, discussed in Part Four. Other potential applications include
Library subroutines for frequently wanted functions
System programs
Function tables
For a modest-sized requirement, the advantage of ROM is that the data or program is permanently in main memory and need never be loaded from a secondary storage device.
A ROM is created like any other integrated circuit chip, with the data actually wired into the chip as part of the fabrication process. This presents two problems:
The data insertion step includes a relatively large fixed cost, whether one or thousands of copies of a particular ROM are fabricated.
There is no room for error. If one bit is wrong, the whole batch of ROMs must be thrown out.
When only a small number of ROMs with a particular memory content is needed, a less expensive alternative is the programmable ROM (PROM), Like the ROM, the PROM is nonvolatile and may be written into only once. For the PROM, the writing process is performed electrically and may be performed by a supplier or customer at a time later than the original chip fabrication. Special equipment is required for the writing or “programming” process. PROMs provide flexibility and convenience.The ROM remains attractive for high-volume production runs.
Another variation on read-only memory is the read-mostly memory, which is useful for applications in which read operations are far more frequent than write operations but for which nonvolatile storage is required. There are three common forms of read-mostly memory: EPROM, EEPROM, and flash memory.
The optically erasable programmable read-only memory (EPROM) is read and written electrically, as with PROM. However, before a write operation, all the storage cells must be erased to the same initial state by exposure of the packaged chip to ultraviolet radiation. Erasure is performed by shining an intense ultraviolet light through a window that is designed into the memory chip. This erasure process can be performed repeatedly; each erasure can take as much as 20 minutes to perform. Thus, the EPROM can be altered multiple times and, like the ROM and PROM, holds its data virtually indefinitely. For comparable amounts of storage, the EPROM is more expensive than PROM, but it has the advantage of the multiple update capability.
A more attractive form of read-mostly memory is electrically erasable programmable read-only memory (EEPROM). This is a read-mostly memory that can be written into at any time without erasing prior contents; only the byte or bytes addressed are updated. The write operation takes considerably longer than the read operation, on the order of several hundred microseconds per byte. The EEPROM combines the advantage of nonvolatility with the flexibility of being updatable in place, using ordinary bus control, address, and data lines. EEPROM is more expensive than EPROM and also is less dense, supporting fewer bits per chip.
Another form of semiconductor memory is flash memory (so named because of the speed with which it can be reprogrammed). First introduced in the mid-1980s, flash memory is intermediate between EPROM and EEPROM in both cost and functionality. Like EEPROM, flash memory uses an electrical erasing technology. An entire flash memory can be erased in one or a few seconds, which is much faster than EPROM. In addition, it is possible to erase just blocks of memory rather than an entire chip. Flash memory gets its name because the microchip is organized so that a section of memory cells are erased in a single action or “flash.” However, flash memory does not provide byte-level erasure. Like EPROM, flash memory uses only one transistor per bit, and so achieves the high density (compared with EEPROM) of EPROM



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